文章摘要
不同温度下AlGaN/GaN HEMT器件直流特性研究
Study on DC characteristics of AlGaN/GaN HEMT devices at different temperatures
投稿时间:2024-04-09  修订日期:2024-05-09
DOI:
中文关键词: AlGaN/GaN HEMT  高温特性  自热效应  TCAD  电子饱和速度
英文关键词: AlGaN/GaN HEMT  High temperature characteristics  Self-heating effect  TCAD  Electron saturation velocity
基金项目:国家自然科学基金资助项目(11975257,12075045,11875097,62074146);中央高效基本科研业务费专项资金资助项目(DUT20RC(3)042,DUT19RC(3)074,DUT19LK45).
作者单位
谷海燕 大连理工大学集成电路学院 
张贺秋* 大连理工大学集成电路学院 
朱江 大连理工大学集成电路学院 
徐林欣 大连理工大学集成电路学院 
吴一航 大连理工大学集成电路学院 
梁晓华 中国科学院高能物理研究所北京 
摘要点击次数: 18
全文下载次数: 0
中文摘要:
      GaN材料具有宽禁带和耐高压的特性,因此AlGaN/GaN高电子迁移率晶体管(HEMT)能够在较高的温度下正常工作。但随着工作温度升高,AlGaN/GaN HEMT器件的性能将有所退化研究AlGaN/GaN HEMT性能随温度的变化特性,有利于优化宽温度范围内的器件特性。利用TCAD软件,引入热力学相关模型,对不同温度下的器件特性进行仿真,通过考虑高场速度饱和模型(High-Field Saturation)中电子饱和速度对温度的依赖性,在300K到573K的温度范围内,将仿真结果与实际测量数据拟合,得到电子饱和速度与温度之间的经验模型方程。此外,分析了HEMT器件高温直流特性变化的原因。
英文摘要:
      GaN materials have wide bandgap and high voltage resistance, so AlGaN/GaN high electron mobility transistors (HEMTs) can operate at higher temperatures. However, with the increase of operating temperature, the performance of AlGaN/GaN HEMT will degrade. Studying the performance characteristics of AlGaN/GaN HEMT with temperature is conducive to optimizing the device characteristics in a wide temperature range. TCAD software is used to introduce a thermodynamic correlation model to simulate the device characteristics under different temperatures. Considering the temperature dependence of electron Saturation speed in the High-Field saturation model, the simulation results are fitted with the actual measurement data in the temperature range of 300K to 573K. The empirical model equation between electron saturation velocity and temperature is obtained. In addition, the reasons for the variation of high temperature DC characteristics of HEMT devices are analyzed.
View Fulltext   查看/发表评论  下载PDF阅读器
关闭