文章摘要
PEI功能化的AlGaN/GaN HEMT二氧化碳传感特性研究
PEI-Functionalized AlGaN/GaN HEMT for Carbon Dioxide Sensing
投稿时间:2024-04-15  修订日期:2024-05-14
DOI:
中文关键词: AlGaN/GaN高电子迁移率晶体管  聚乙烯亚胺  CO2传感器
英文关键词: AlGaN/GaN high electron mobility transistors  polyethyleneimine  CO2 sensor
基金项目:国家自然科学基金资助项目(11975257,12075045,11875097,62074146);中央高校基本科研业务费专项资金资助项目(DUT20RC(3)042, DUT19RC(3)074, DUT19LK45);大连市科技创新基金(2023JJ12GX013).
作者单位
徐林欣 大连理工大学 集成电路学院 
张贺秋* 大连理工大学 集成电路学院 
夏晓川 大连理工大学 集成电路学院 
吴一航 大连理工大学 集成电路学院 
谷海燕 大连理工大学 集成电路学院 
朱江 大连理工大学 集成电路学院 
郭文平 元旭半导体科技股份有限公司 
黄慧诗 江苏新广联科技股份有限公司 
梁红伟 大连理工大学 集成电路学院 
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中文摘要:
      AlGaN/GaN高电子迁移率晶体管(HEMT)已经广泛应用于氢气、氨气、硫化氢等气体传感器的开发,但是基于AlGaN/GaN HEMT的二氧化碳(CO2)传感器的研究较少。本文将聚乙烯亚胺(PEI)物理涂覆于AlGaN/GaN HEMT栅极(PEI-HEMT)用于CO2传感。室温下,PEI-HEMT可以检测2%-15%的CO2,随着湿度的增加,器件对CO2的响应灵敏度增加,基线漂移减小,响应速度变慢。由于物理涂覆在栅极的PEI易脱落,PEI-HEMT的长期稳定性较差,因此采用烷基偶联的方式通过戊二醛(GA)在栅极化学桥接PEI(PEI-GA-HEMT)。PEI-GA-HEMT的CO2响应速度比PEI-HEMT慢,但它的可重复性和长期稳定性较好,且检测范围更广,最低能检测500 ppm的CO2。
英文摘要:
      AlGaN/GaN high electron mobility transistors (HEMT) have been widely used in the development of gas sensors for hydrogen, ammonia, hydrogen sulfide. However, there is little research on carbon dioxide (CO2) sensors based on AlGaN/GaN HEMT. In this paper, polyethyleneimine (PEI) was physically coated on AlGaN/GaN HEMT gate (PEI-HEMT) for CO2 sensing. At room temperature, the PEI-HEMT can detect 2%-15% CO2. The response to CO2 of the device increases as humidity increases, while baseline drift decreases and the response time slows down. The long-term stability of the sensor was poor due to the ease of detachment of the PEI physically coated on the gate. To address this issue, an alkyl coupling was used to chemically bridge the PEI through glutaraldehyde (GA) at the gate, resulting in PEI-GA-HEMT. Although PEI-GA-HEMT has a slower CO2 response than PEI-HEMT, it still offers better repeatability and long-term stability, as well as a wider detection range of at least 500 ppm CO2.
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